F5305s Ir

Updated October 6, 2026

Overview

Product sourcing insights & recommendations

27 来源

The phrase 'f5305s ir' refers to the IRF5305S, a high-performance P-Channel HEXFET Power MOSFET originally developed by International Rectifier (now part of Infineon) Infineon Alldatasheet. It is widely recognized in the electronics market for its high-side switching capabilities and robust performance in harsh environments Scribd Electropeak.

1. Product Technical Insights

The IRF5305S is characterized by its fast switching speed and extremely low on-resistance ($R_{DS(on)}$) of 0.06 $\Omega$, which reduces power loss during operation Datasheet4U Infineon.

Key Specifications: It handles a Drain-Source voltage ($V_{DS}$) of -55V and a continuous drain current ($I_D$) of -31A Alltransistors.
Package: It is standardly housed in the D2PAK (TO-263) surface-mount package, optimized for high power dissipation (up to 110W) Infineon Easybom.
Core Applications: The component is a staple in automotive electronics, DC-DC converters, and motor control modules where high-side P-channel switching is required Infineon Electropeak.

2. Market Trends & Insights (2025–2026)

The market for components like the IRF5305S is currently influenced by broader semiconductor shifts:

Sector Growth: The global power MOSFET market is projected to grow at a 5.08% CAGR, reaching $30.36 billion in 2026 and continuing upward as automotive electrification accelerates Precedenceresearch.
Shift to Isolation Modules: A notable trend in DIY and industrial automation is the packaging of the F5305S into PWM Isolation MOSFET Modules Electropeak. These modules use optocouplers to isolate control circuits (like Arduino/PLCs) from high-power loads, improving system safety and reliability Laskakit Easybom.
Legacy Status: The IRF5305S is now considered a "legacy" fifth-generation part. While still widely available, many new designs are transitioning toward Silicon Carbide (SiC) or newer generations of silicon MOSFETs for better thermal efficiency Precedenceresearch Linkedin.

3. Sourcing & Availability

The IRF5305S remains highly available from B2B suppliers, particularly in manufacturing hubs like Shenzhen.

Pricing: Individual components range from $0.68 to $1.04 depending on order volume, while 4-channel isolation modules typically cost between $1.30 and $1.55 .
Supplier Landscape: Dominant suppliers include Shenzhen Weiye Chengsheng Technology and Shenzhen Beast & Lion Technology, who offer both the raw components and integrated PWM controller modules .

Here are the insights on the F5305S MOSFET market. Would you like to:

Sources & References

27 sources cited · Verified industry data & reports

IRF530S, SiHF530S Power MOSFET

Vishay

Third generation power MOSFETs from Vishay. It provides the highest lead, 6 mm (0.25") Body diode voltage VSD. Mold flash shall not exceed 0.127 mm (0.005") ...

IRF5305S Datasheet - mosfet

All Transistors

MOSFET, P-Ch, 55V, 31A. Maximum Power Dissipation: 110 W. Maximum Drain-Source Voltage: 55 V. Maximum Gate-Source Voltage: 20 V. Junction Temperature: 175 °C - ...

F5305S Isolation MOSFET Module

ElectroPeak

Specifications of F5305S Isolation MOSFET Module ; Interface · Input and output terminals ; Dimension · 46x25x18mm ; Input voltage · 3 to 20V ; Current · 5mA ; Output ...

F5305S Datasheet - D2PAK MOSFET | VBsemi

Datasheet4U

F5305S Specifications · Package : D2PAK · Mount Type : Surface Mount · Current Rating : -31A · Breakdown Voltage : -55V · Threshold Voltage : -4V · RDS(on) Max : 60mΩ ...

IRF5305S - P-channel MOSFETs

Infineon Technologies

IRF5305S is a P-channel power MOSFETs with VDS max: -55 V, RDS (on) max: 60 mOhm, Package: D2PAK (TO-263), Technology: IR MOSFET™, Polarity: P.

F5305S Datasheet, PDF

ALLDATASHEET.COM

F5305S Datasheet. Part #: IRF5305S. Datasheet: 171Kb/10P. Manufacturer: International Rectifier. Description: Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, ...