Gt100da120u
Overview
Product sourcing insights & recommendations
The phrase 'gt100da120u' refers to the VS-GT100DA120U, a high-performance 1200V, 100A Insulated Gate Bipolar Transistor (IGBT) module manufactured by Vishay. It is designed in a SOT-227 (miniBLOC) package for high-frequency switching (4–30 kHz) in industrial applications such as motor drives, UPS systems, and welding equipment. FarnellDatasheet4U
Product Insights
* Lifecycle Status: The original VS-GT100DA120U is currently Obsolete and no longer in active production. The direct recommended replacement is the VS-GT100DA120UF, which maintains similar specs with updated environmental compliance. DigikeyDigikeyDigikey
* Technical Edge: It utilizes Trench IGBT technology, offering a very low collector-emitter saturation voltage ($V_{CE(on)}$ typical 1.73V) and integrated HEXFRED® antiparallel diodes for soft recovery, which minimizes switching losses. FarnellAlldatasheet
* Sourcing Availability: While obsolete from major distributors like DigiKey, active inventory is still available through specialized B2B suppliers. Prices generally range from $48 to $93 per unit depending on quantity and stock availability. AlibabaAlibaba
Market Trends
* 1200V Segment Dominance: The 1200V IGBT market is a critical segment for medium-voltage industrial applications, projected to grow at a CAGR of ~6–9% through 2030, driven by the global expansion of renewable energy and electric vehicle (EV) charging infrastructure. SphericalinsightsFortunebusinessinsightsMordorintelligence
* Efficiency Shift: There is a strong industry transition toward Trench-gate and Field-stop IGBT technologies to meet stricter energy efficiency mandates (e.g., in Europe and North America) for industrial automation and "Industry 4.0" adoption. PrecedenceresearchOpenpr
* Supply Dynamics: The market is currently characterized by high demand for power semiconductors, leading to a focus on newer, more efficient modules like the IXYN82N120C3 as alternatives to legacy SOT-227 designs. Alibaba
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Sources & References
22 sources cited · Verified industry data & reports
VS-GT100DA120U Insulated Gate Bipolar Transistor ( ...
Farnell
Trench IGBT technology ・ 10 μs short circuit capability ・ maximum = 150 °C • Fully isolated package. UL approved file E78996. Speed 4 kHz to 30 kHz
VS-GT100DA120U Datasheet(PDF) - Vishay Siliconix
ALLDATASHEET.COM
FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • 10 μs short circuit capability • HEXFRED® antiparallel diodes with ...
GT100DA120U Datasheet - Transistor | Vishay
Datasheet4U
GT100DA120U is Insulated Gate Bipolar Transistor manufactured by Vishay. Max Collector Current: 187A, Terminals: 4, Collector Emitter Voltage: 1.2kV.
VS-GT100DA120U Datasheet Vishay, Download PDF
radiolocman.com
DC Collector Current: 258 A; Number of Pins: 4; Operating Temperature Range: -40В°C to +150В°C; Power Dissipation Max: 893 W; Transistor Case Style: SOT- ...
View GT100DA120U_3726297.PDF datasheet online
Datasheet.HK
GT100DA120U Datasheet File. GT100DA120U insulated gate bipolar transistor ・ mechanical specifications ・ maximum junction and storage temperature range ・ ...
VS-GT100NA120UX "High Side Chopper" IGBT SOT-227 ( ...
Mouser Electronics
Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED® clamping diode • 10 μs short circuit capability • Fully isolated package • Speed 4 kHz to ...