High Power Microwave Amplifier

Broadband RF High Power Amplifiers (HPA/SSPA) | ERZIA

www.erzia.com

The ERZIA product guide presents our recently expanded product portfolio in an easy-to-access format. The current lineup of ERZIA products includes some of the industry’s most robust devices and modules available. The guide details LNAs and HPAs by bandwidth and lists all of ERZIA’s Microwave Assemblies.

GaN Amplifier Technology | Mercury Systems

www.mrcy.com

Mercury combines expertise in developing space-qualified solutions with GaN amplifier technology to deliver advanced technology to space. Learn more. By using GaN devices in a radio frequency (RF) amplifier, high-output power can be achieved without increasing size and weight. This is ideal for applications requiring maximum RF power density, such as active antenna arrays. Solid-state power amplifiers (SSPA) based on GaN semiconductor technology bring more power to smaller form factors. Mercury offers a broad portfolio of some of the industry’s most compact GaN SSPA products for applications demanding both high frequency and high-power density, utilizing the latest in thermal and electrical modeling and advanced power-combining structures. As the space industry pivots towards smaller, low-earth orbit (LEO) constellations, a need is emerging for size, weight and power (SWaP)-optimized power amplification. Mercury is an industry leader in the development of GaN-based amplifiers — a compact and low-cost alternative to traveling wave tube (TWT) amplifiers.

GaN Solid State Power Amplifiers for Microwave Power Transfer and ...

globals.ieice.org

GaN solid state power amplifiers (SSPA) for wireless power transfer and microwave heating have been reviewed. For wireless power transfer, 9 W output power with 79% power added efficiency at 5.8 GHz has been achieved. For microwave heating, 450 W output power with 70% drain efficiency at 2.45 GHz has been achieved. Recently, semiconductor-based microwave power source, namely solid-state power amplifiers (SSPAs), for microwave heating has been developed vigorously. In Table 1, comparison of magnetron, LDMOS (Laterally Diffused Metal Oxide Semiconductor) SSPA [5] and GaN SSPA is shown. At this moment, there is no commercially available GaN SSPA for microwave heating. Therefore, GaN SSPA performance is estimated from performance of GaN high power amplifiers. From viewpoint of output power, magnetrons are superior to SSPAs. However, output power of SSPAs can be combined to get higher power, even up to some kW, since they are phase coherent. From viewpoint of efficiency, magnetron is slightly superior to SSPAs, but SSPA efficiency is getting better and better. Also, cost of SSPAs is decreasing drastically. It will be comparable to magnetron in near future. Considering material properties, GaN is more suitable than LDMOS. GaN SSPA will play important role for microwave heating to realize CN.

Top 7 Trends In Microwave and RF Solid State Power Amplifier (SSPA)

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Introduction: Top 7 Trends In Microwave and RF Solid State Power Amplifier (SSPA) Trends · The rapid evolution of technology has brought Microwave and RF Solid State Power Amplifiers (SSPAs) into the spotlight, significantly impacting various industries. SSPAs are integral to modern communication systems, providing the necessary amplification for signals in satellite communication, radar systems, and broadcasting. As demand for higher efficiency and reliability grows, so too does the innovation within SSPA technology. This blog explores the latest trends shaping the future of Microwave and RF Solid State Power Amplifiers, emphasizing their growing importance in an increasingly connected world. ... One of the most significant developments in SSPAs is the shift towards advanced semiconductor materials like Gallium Nitride (GaN) and Gallium Arsenide (GaAs). The Microwave and RF Solid State Power Amplifier (SSPA) market is undergoing significant transformations driven by advancements in materials, design, efficiency, and technology integration. As the demand for more efficient, compact, and versatile SSPAs continues to rise, these trends will shape the future of communication systems and beyond. These materials offer superior performance in terms of power density, efficiency, and thermal management compared to traditional silicon-based amplifiers. GaN, in particular, has become the material of choice for high-frequency and high-power applications, providing a robust foundation for next-generation SSPAs.

Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies ...

www.sciencedirect.com

This activity aims to demonstrate a 10-W continuous-wave (CW) solid-state power amplifier (SSPA) covering the frequency band between 59 GHz and 71 GHz. At E-band frequencies, where dedicated down-link (71 – 76 GHz) and up-link (81 – 86 GHz) bands are defined for satcom applications with high data rates, only few research activities have been published so far. In [12], a downlink communication module is reported that implements a 2-W GaN MMIC as HPA and uses metamorphic HEMT (mHEMT) technology for signal processing purposes. In one of the first research programs related to these applications, DARPA launched the 100 Gb/s RF Backbone Program [13] that started back in 2013 with basic research on the technology building blocks and ended in 2018 with flight testing results. This program aimed to overcome a distance of at least 100 km. GaN HPAs operating at E-band frequencies have been clearly identified as the technology of choice to build SSPAs suitable to provide the required amount of linear output power. In this paper, we outline the current state of the art and trends for future development in millimeter-wave (mmw) amplifiers based on gallium nitride (GaN) semiconductors. To that end, we give an overview of recent technological results of currently operational GaN foundries and classify them with respect to their maximum frequency of operation and the current-gain cutoff frequency. Furthermore, focusing on frequencies above 80 GHz, we develop a comprehensive survey of GaN high-power amplifiers (HPAs) and provide a comparison to competing technologies such as indium phosphide (InP) and silicon germanium (SiGe). We also introduce a newly developed 6-stage GaN amplifier that is targeted towards the upper D-band.

Microwave SSPAs in EW and Radar Systems: The Current Situation ...

www.microwavejournal.com

GaN HEMT devices, typically using GaN-on-SiC technology, are already significant and growing in importance in this industry. MMICs are used wherever possible, but discrete transistors within a hybrid circuit may be the best solution for higher microwave power levels. CW systems are required for most EW system applications, whereas pulsed amplifiers are common for most non-AESA radar systems. In this article, SSPAs are characterized as medium-power amplifiers (MPAs), high-power amplifiers (HPAs) and very high-power amplifiers (VHPAs). Table 1 shows a categorization of these classifications. These amplifier designations can generally be described with the following characteristics: MPAs (CW): Most often, GaAs-based MMICs in QFN packages with DC supply voltages typically around 12 V. HPAs (CW): GaN-based MMICs for tens to hundreds of watts. This SSPA uses six GaN-based MMICs designed by PRFI. Two of the MMICs are close to the input side with the remaining four located near the output. The device operates with a 10 percent duty cycle and provides an average output power of 5.5 W from 27.5 to 31 GHz. ... You must login or register in order to post a comment. ... Click this featured vendor's logo for the latest RF/microwave products, catalogs, brochures and company news. For several decades, the microwave electronics industry has exhibited strong market growth, especially for solid-state components, including solid-state power amplifiers (SSPAs).1 This article focuses on these types of amplifier products in various electronic warfare (EW) and radar system applications.