Rd70hup2
Overview
Product sourcing insights & recommendations
The Mitsubishi RD70HUP2 is a high-power silicon MOSFET RF transistor specifically engineered for VHF and UHF radio applications, offering a balance of high efficiency and reliability. Meus-SemiconductorsRfparts
Technical Specifications
Optimized for the 175–530 MHz frequency range, this component is a staple in professional mobile radio output stages:
* Power Output: Delivers a typical output of 75W at 530 MHz (UHF) and 84W at 175 MHz (VHF). EfoEnigma-Shop
* Operating Voltage: Designed for 12.5V systems, making it ideal for vehicle-mounted mobile radio sets. EfoRfparts
* Efficiency: Achieves a drain efficiency of 64% (UHF) to 74% (VHF), ensuring reduced thermal load during transmission. Efo
* Durability: Features integrated gate protection and high VSWR tolerance (65:1), ensuring stability in mission-critical environments. Efo
Market Trends & Insights (2024–2026)
The RF power market is currently transitioning from LDMOS to Gallium Nitride (GaN) for high-frequency 5G/6G infrastructure. However, the RD70HUP2 maintains a strong niche:
* Defensible Niche: While GaN dominates >3 GHz bands, Silicon MOSFETs like the RD series remain the "gold standard" for sub-1 GHz professional mobile radios (PMR) due to their lower cost and superior performance at 12.5V.
* Mission-Critical Demand: Emergency services and digital land mobile radio (DMR) replacement cycles continue to drive demand for reliable silicon-based high-power amplifiers.
* Sourcing Environment: Sourcing for the RD70HUP2 is stable through specialized RF component distributors, though buyers often encounter the similar RD70HUF2 model in stock listings, which shares overlapping VHF/UHF characteristics.
Detailed specifications and identified sourcing leads are provided in the attached files.
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Mitsubishi Rd70hup2 Rf Power Mosfet Transistor
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Sources & References
22 sources cited · Verified industry data & reports
RD70HUP2 - Mitsubishi Electric
meus-semiconductors.com
from 30MHz to 1GHz and output power levels up to 100W. Specifications Frequency (MHz) 175 / 530 Drain Voltage (V) 12.5 Drain Efficiency (Min %) 74 / 64(typ) ...
RD70HUP2-501 Mitsubishi Silicon MOSFET Power ...
RF Parts
RD70HUP2 is a MOSFET type transistor specifically designed for VHF/UHF RF power amplifiers applications. High Power and High Efficiency Pout=75Wtyp
RD70HUP2 - Mitsubishi Electric US, Inc. | RF Transistor
everything RF
The RD70HUP2 is a RF Transistor with Frequency 175 to 530 MHz, Power 48.75 to 49.24 dBm, Power(W) 75 to 84 W, Supply Voltage 12.5 V, Input Power 4 to 5 W.
RD70HUP2
ЭФО
Compliance,Silicon MOSFET Power Transistor, 175MHz,530MHz, 70W, 12.5V. W Pin Input Power Zg=Zl=50Ω 12 W ID Drain
Mitsubishi RD70HUP2-T5105 70W RF Power Mosfet
Enigma Component Shop
The RD70HUP2 is an RF power mosfet for VHF/ UHF mobile radio applications. Rated at 75W output to 520MHz with a 12.5V supply, and up to 84W at 175MHz.
RD70HUP2 | In Stock
utsource
RD70HUP2 ; Output Power: 70W (typical) ; Supply Voltage: 12.5V (typical) ; Operating Voltage: 12.5V ± 0.5V ; Input Power: 50mW (typical) ; Efficiency: 55% (typical).